To provide a vapor phase growth device having such a structure that can form a higher-quality layer film on an objective substrate at high speed.

An objective substrate CB is held by a fixed susceptor 110 that is subject to induction heating by high-frequency magnetic flux, by means of a moving susceptor 120. In this case, heat transmitted to the moving susceptor 120 is adjusted by a heat transmission adjusting mechanism, so that the heat generating temperature of the fixed susceptor 110 is compensated. Therefore, even if the heat generating temperature of the fixed susceptor 110 is not uniform on its panel surface, the temperature of the moving susceptor 120 to be heated by heat transmission can be uniform. Thus, the objective substrate CB can be uniformly heated, and the layer film can be formed in appropriate quality.