Title:
VAPOR PHASE GROWTH METHOD AND MANUFACTURING METHOD OF SUBSTRATE FOR LIGHT-EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP2012248756
Kind Code:
A
Abstract:
To provide a hydride vapor phase growth method capable of controlling the number of precipitation of GaP by a material gas to a member other than a substrate in an HVPE growth device.
In the vapor phase growth method for epitaxially growing a group III-V compound semiconductor layer on a substrate in a vapor phase growth device by the hydride vapor phase growth method, gas etching is performed in the vapor phase growth device by interrupting the epitaxial growth at least once in the way of epitaxial growth of the group III-V compound semiconductor layer.
Inventors:
KAWAHARA MINORU
AKIYAMA TOMOHIRO
NISHIYAMA KAZUNORI
AKIYAMA TOMOHIRO
NISHIYAMA KAZUNORI
Application Number:
JP2011120811A
Publication Date:
December 13, 2012
Filing Date:
May 30, 2011
Export Citation:
Assignee:
SHINETSU HANDOTAI KK
International Classes:
H01L21/205; C23C16/44; C30B25/14; C30B29/44; H01L33/30
Domestic Patent References:
| JP2002231643A | 2002-08-16 | |||
| JP2003517416A | 2003-05-27 | |||
| JP2011508428A | 2011-03-10 | |||
| JP2010027914A | 2010-02-04 | |||
| JP2006225180A | 2006-08-31 |
Attorney, Agent or Firm:
Mikio Yoshimiya