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Title:
VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY
Document Type and Number:
Japanese Patent JP2011006319
Kind Code:
A
Abstract:

To provide a vicinal gallium nitride substrate which is usefully employed for homoepitaxial deposition in the fabrication of III-V nitride-based microelectronic and opto-electronic devices.

The GaN substrate includes a (0001) surface offcut from the <0001> direction toward a direction selected from the group consisting of Direction (1) or Direction (2), at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E6 cm-2. The substrate may be formed by offcut slicing, offcut lapping or growth on a vicinal heteroepitaxial substrate.


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Inventors:
VAUDO ROBERT P
XU XUEPING
FLYNN JEFFREY S
BRANDES GEORGE R
Application Number:
JP2010177527A
Publication Date:
January 13, 2011
Filing Date:
August 06, 2010
Export Citation:
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Assignee:
CREE INC
International Classes:
C30B29/38; C30B33/10; H01L21/205; H01L29/04; H01L29/20
Domestic Patent References:
JP2007534159A2007-11-22
JP2010177527A2010-08-12
JP2006539971A2004-11-12
JP2001196632A2001-07-19
JPS6390885A1988-04-21
JP2002016000A2002-01-18
Foreign References:
US20010030329A12001-10-18
Attorney, Agent or Firm:
Patent Service Corporation Patent Office Sykes



 
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