WAFER EDGE ETCHING DEVICE AND METHOD - SAMSUNG ELECTRONICS CO LTD

Title:

WAFER EDGE ETCHING DEVICE AND METHOD

Document Type and Number:

Japanese Patent JP2005005701

Kind Code:

A

Abstract:

To provide a wafer edge etching method capable of increasing electric power without twisting a wafer when plasma etches a thin film layer at an edge bead.

The wafer edge etching method is to etch a semiconductor wafer including a bottom electrode serving as a stage disposed below the semiconductor wafer for supporting the semiconductor wafer. The method comprises: a step of putting the semiconductor wafer in a chamber; a step of increasing pressure in the chamber; a step of supplying at least one kind of etching gas; a step of supplying electric power to the chamber; a step of etching the semiconductor wafer at the edge bead of the semiconductor wafer or the back surface of the same; a step of interrupting the supply of the electric power and the etching gas; and a step of exhausting and purging the exhaust gas from the chamber.

Inventors:

CHOI CHANG-WON
KIM TAE RYONG
KIM JONG BAUM
JO TEIU
BYUN CHANG JU

Application Number:

JP2004155918A

Publication Date:

January 06, 2005

Filing Date:

May 26, 2004

Export Citation:

Click for automatic bibliography generation Help

Assignee:

SAMSUNG ELECTRONICS CO LTD

International Classes:

H01L21/3065; H01J37/32; H01L21/00; (IPC1-7): H01L21/3065

Attorney, Agent or Firm:

Mikio Hatta
Yasuo Nara
Etsuko Saito
Katsuyuki Utani
Toshifumi Fujii

Previous Patent: PREPROCESSING METHOD FOR PROTECTING REAR SIDE OF WAFER AND REAR SIDE PROTECTED WAFER

Next Patent: LAND GRID ARRAY ASSEMBLY EMPLOYING COMPRESSIVE LOAD