Title:
WAFER-HEATING DEVICE
Document Type and Number:
Japanese Patent JP3921143
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a wafer-heating device configuring a semiconductor manufacturing and inspecting apparatus which has a high cooling rate when a setting temperature is changed.
SOLUTION: The wafer-heating device is configured under the condition that the distance between a gas injector and a heat equalizing plate is 0.2-3 mm, the closely opposed area of a nozzle having a gas injection port to the heat equalizing plate is 80 mm2 or less, and relation among the flow velocity F0 of cooling gas injected from the gas injection port expressed by the cooling gas flow rate (liter/min.) /the total area mm2 of gas injection ports, the area S0 of the heat equalizing plate, and the number N of nozzles is shown by 2≤(S0/N)/F0≤28, and N≥4.
Inventors:
Tactile Hiroshi
Application Number:
JP2002220487A
Publication Date:
May 30, 2007
Filing Date:
July 29, 2002
Export Citation:
Assignee:
Kyocera Corporation
International Classes:
H01L21/02; H01L21/027; (IPC1-7): H01L21/02; H01L21/027
Domestic Patent References:
| JP6244269A | ||||
| JP2001189276A | ||||
| JP2002198297A |