To solve the problem that the temperature variation in the surface of a wafer is large during the transition period until the temperature is stabilized immediately after the wafer is put on the plate-shaped ceramic body of wafer heating equipment.

The wafer heating equipment is provided with the plate-shaped ceramic body on or in which a plurality of belt-like resistance heat generating bodies are formed, supporting pins which are protruded from the ceramic body to support a wafer, and through holes formed through the ceramic body. In the ceramic body, three or more through holes are formed on a concentric circle having a diameter smaller than the 1/2 of the outside diameter of the ceramic body. The supporting pins are disposed at the center and on the outer peripheral side of the ceramic body. In addition, the central angles between straight lines respectively connecting the center of the ceramic body and the through holes to each other, and other straight lines respectively connecting the center of the ceramic body and the supporting pins which are the nearest to the through holes to each other, are adjusted to ≤10°.