Title:
WAFER PROCESSING METHOD
Document Type and Number:
Japanese Patent JP2020061494
Kind Code:
A
Abstract:
To provide a wafer processing method capable of performing plasma etching while holding down costs.SOLUTION: A wafer processing method for dividing a wafer including a device region in which a device is formed and an outer peripheral excess region surrounding the device region comprises a protection member arranging step (ST1), a laser processing groove forming step (ST2), a plasma etching step (ST3), and a functional layer cutting step (ST4). The protection member arranging step arranges an adhesive tape on a surface of the wafer. The laser processing groove forming step forms a laser processing groove having a depth not reaching a functional layer on a rear surface side corresponding to the device region by irradiating the device region with a laser beam of a wavelength having absorbability to the substrate along division schedule lines. The plasma etching step supplies a plasmatized etching gas to the rear surface side of the wafer and divides the substrate. The functional layer cutting step cuts a functional layer exposed on a laser processing groove by irradiating the functional layer with laser beam from the rear surface side of the wafer.SELECTED DRAWING: Figure 2
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Inventors:
TOIDA YOSHITAMA
Application Number:
JP2018192854A
Publication Date:
April 16, 2020
Filing Date:
October 11, 2018
Export Citation:
Assignee:
DISCO ABRASIVE SYSTEMS LTD
International Classes:
H01L21/301; B23K26/364; B23K26/38; B24B1/00; B24B7/04; H01L21/304
Domestic Patent References:
| JP2009182178A | 2009-08-13 | |||
| JP2015095508A | 2015-05-18 | |||
| JP2015095509A | 2015-05-18 | |||
| JP2018156973A | 2018-10-04 | |||
| JP2017011133A | 2017-01-12 |
Attorney, Agent or Firm:
Sakai International Patent Office