Title:
Ｘ線検出器
Document Type and Number:
Japanese Patent JP5710904
Kind Code:
B2
Abstract:
An X-ray detector constructed as an exemplary embodiment of the present invention includes a semiconductor layer, a data line including a source electrode covering a first portion of the semiconductor layer, a drain electrode disposed opposite to the source electrode, a first lower electrode formed on the upper portion of a second portion of the semiconductor layer and a gate insulating layer and elongated from the drain electrode, and a passivation layer formed on the upper portion of one part of the lower electrode including the drain electrode. Further, the second lower electrode is formed approaching the gate electrode. The X-ray detector constructed as the exemplary embodiment of the present invention includes a second lower electrode formed on the passivation layer and placed approaching a gate electrode. The area in which a diode is disposed may be maximized, and the amount of leakage current may be reduced.
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Inventors:
Hiroshi Asahi
Kim Donghae
Kim Donghae
Application Number:
JP2010163256A
Publication Date:
April 30, 2015
Filing Date:
July 20, 2010
Export Citation:
Assignee:
Samsung Display Co.,Ltd.
International Classes:
H01L27/146; G01T1/20; G01T1/24; H01L27/144
Domestic Patent References:
| JP2009295908A | ||||
| JP2009267326A | ||||
| JP2005116543A |
Attorney, Agent or Firm:
IPD International Patent Business Corporation