Title:
MATERIAL FOR FORMING SILICON-CONTAINING FILM AND PATTERN FORMATION METHOD
Document Type and Number:
Japanese Patent JP2017097240
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a novel material for forming a silicon-containing film good in detachability during conducting wet detachment using an acidic liquid.SOLUTION: There is provided a material for forming silicon-containing film used in a pattern formation method having a process for applying a silicon-containing film material on a substrate to form a silicon-containing film, a process for forming a pattern with the silicon-containing film as a mask and a process for contacting the silicon-containing film with an acidic liquid and containing (A) a siloxane-based polymer containing a constitutional unit represented by the formula (1) and (B) an organic solvent. (1), where Ris a monovalent organic group having a crosslinkable group, Ris a monovalent organic group having the crosslinkable group, a hydrogen atom, a hydroxyl group, a substituted or unsubstituted non-crosslinkable hydrocarbon group with 1 to 20 carbon atoms and l is 0 or 1.SELECTED DRAWING: None
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Inventors:
ANNO YUSUKE
SEKO TOMOAKI
OTSUBO YUSUKE
SEKO TOMOAKI
OTSUBO YUSUKE
Application Number:
JP2015231028A
Publication Date:
June 01, 2017
Filing Date:
November 26, 2015
Export Citation:
Assignee:
JSR CORP
International Classes:
G03F7/11; C08G77/04; G03F7/26; H01L21/027
Domestic Patent References:
| JP2007163846A | 2007-06-28 | |||
| JP2007178455A | 2007-07-12 | |||
| JP2009237363A | 2009-10-15 | |||
| JP2010085912A | 2010-04-15 | |||
| JP2013067798A | 2013-04-18 | |||
| JPS62269140A | 1987-11-21 |
Foreign References:
| WO2013146600A1 | 2013-10-03 | |||
| WO2015146749A1 | 2015-10-01 | |||
| WO2012117948A1 | 2012-09-07 | |||
| US20100255427A1 | 2010-10-07 |
Attorney, Agent or Firm:
Kaoru Watanabe
Miwako Inoue
Miwako Inoue