Title:
The control method of a semiconductor device and a semiconductor device
Document Type and Number:
Japanese Patent JP5907199
Kind Code:
B2
Abstract:
A semiconductor device includes a transistor, a diode, a first detection circuit, a second detection circuit, a calculation circuit, and a determination circuit. The diode is connected in reverse parallel with the transistor. The first detection circuit is configured to detect a change rate of a gate voltage of the transistor with respect to time. The second detection circuit is configured to detect a gate current of the transistor. The calculation circuit is configured to calculate a gate capacitance based on the change rate of the gate voltage with respect to time, and the gate current. The determination circuit is configured to determine, based on a determination result of the gate capacitance when a charge is injected to a gate of the transistor, whether a current flows to the diode or to the transistor.
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Inventors:
Yousuke Nagauchi
Ayumu Koishi
Ayumu Koishi
Application Number:
JP2014049497A
Publication Date:
April 26, 2016
Filing Date:
March 12, 2014
Export Citation:
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA
International Classes:
H02M3/00; H01L21/336; H01L27/04; H01L29/739; H01L29/78; H02M1/00; H03K17/687
Domestic Patent References:
| JP2010004728A | ||||
| JP2012090499A | ||||
| JP2015526932A | ||||
| JP6503938A | ||||
| JP2006314112A | ||||
| JP11154696A | ||||
| JP11066143A | ||||
| JP2008072848A | ||||
| JP2007104759A | ||||
| JP2007209054A | ||||
| JP2008054375A |
Foreign References:
| WO2007116900A1 | ||||
| US7486099 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito
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