Title:
A diamond semiconductor device and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP6124373
Kind Code:
B2
Inventors:
Sora Kato
Toshiharu Makino
Masahiko Ogura
Daisuke Takeuchi
Satoshi Yamazaki
Mutsuko Hatano
Takayuki Iwasaki
Toshiharu Makino
Masahiko Ogura
Daisuke Takeuchi
Satoshi Yamazaki
Mutsuko Hatano
Takayuki Iwasaki
Application Number:
JP2015253889A
Publication Date:
May 10, 2017
Filing Date:
December 25, 2015
Export Citation:
Assignee:
National Institute of Advanced Industrial Science and Technology
National University Corporation Tokyo Institute of Technology
National University Corporation Tokyo Institute of Technology
International Classes:
H01L29/812; H01L21/336; H01L21/337; H01L21/338; H01L29/12; H01L29/78; H01L29/808
Foreign References:
| WO2010001705A1 | ||||
| WO2009128301A1 |
Other References:
Hiromitsu KATO et. al.,Maskless Selective Growth Method for p-n Junction Applications on(001)-Oriented Diamond,Japanese Journal of Applied Physics,日本,The Japan Society of Applied Physics,2012年 8月16日,Volume 51 / Number 9R,090118-1-7
Attorney, Agent or Firm:
Shin Shioda
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