Title:
ダイオードチップ
Document Type and Number:
Japanese Patent JP7341831
Kind Code:
B2
Abstract:
To provide a diode chip that can improve a withstand voltage.SOLUTION: A diode chip 1 includes a p-type semiconductor layer 21 having a first main surface 11, an n-type first semiconductor region 41 formed on a surface layer of the first main surface 11, and a first trench 51 that is formed in an annular shape on the first main surface 11 so as to surround the inner portion of the first semiconductor region 41, and partitions a first pn joint portion 54 separated from the peripheral edge portion of the first semiconductor region 41 in the inner portion of the first semiconductor region 41.SELECTED DRAWING: Figure 3
Inventors:
Kei Watanabe
Mineaki Yoshioka
Junya Yamagami
Masaki Nishida
Mineaki Yoshioka
Junya Yamagami
Masaki Nishida
Application Number:
JP2019180823A
Publication Date:
September 11, 2023
Filing Date:
September 30, 2019
Export Citation:
Assignee:
ROHM Co., Ltd.
International Classes:
H01L21/329; H01L29/06; H01L29/861; H01L29/868; H01L29/87
Domestic Patent References:
| JP2018067663A | ||||
| JP7297384A | ||||
| JP2013149926A |
Foreign References:
| WO2011096031A1 |
Attorney, Agent or Firm:
Patent Attorney Corporation Ai Patent Office