Title:
DRIVE CIRCUIT FOR SEMICONDUCTOR SWITCHING ELEMENT
Document Type and Number:
Japanese Patent JP2017192140
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a drive circuit for a semiconductor switching element capable of reflecting temperature information upon an operation of the drive circuit with accuracy.SOLUTION: A drive circuit for a semiconductor switching element comprises: an input terminal to which an input signal is input; an output terminal connected with a control terminal of the semiconductor switching element; a signal circuit part that generates a drive signal from the input signal and supplies the drive signal to the output terminal; and temperature detection means that includes both first temperature detection means that outputs a first temperature detection signal having a correlation with a temperature of the signal circuit part, and second temperature detection means that receives a second temperature detection signal from an element temperature sensor element for detecting a temperature of the semiconductor switching element. The signal circuit part includes a drive circuit for supplying a current to the control terminal of the semiconductor switching element. The drive circuit switches drive current capability on the basis of both the first temperature detection signal and the second temperature detection signal.SELECTED DRAWING: Figure 2
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Inventors:
HIRATA DAISUKE
Application Number:
JP2017114987A
Publication Date:
October 19, 2017
Filing Date:
June 12, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H03K17/0812; H02M1/00; H02M1/08
Domestic Patent References:
| JP2013219633A | 2013-10-24 | |||
| JP2000083371A | 2000-03-21 | |||
| JP2008017615A | 2008-01-24 |
Attorney, Agent or Firm:
Mamoru Takada
Hideki Takahashi
Yoshimi Kuno
Hideki Takahashi
Yoshimi Kuno