Title:
ALUMINUM NITRIDE MONOCRYSTALLINE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2018078260
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide: an aluminum nitride monocrystalline substrate for manufacturing a UV light-emitting element with good yield by reducing the variations in the performance of a UV light-emitting element; and a method for manufacturing the monocrystalline substrate.SOLUTION: Provided is an aluminum nitride monocrystalline substrate obtained by a method of crystalline growth. The monocrystalline substrate is 100 nm or less in surface roughness Ra, which is measured by a white light interference microscope on a crystal growth face and a rear face to the crystal growth plane. The crystal growth face, and a crystal lattice plane in the monocrystalline substrate are 15 m or larger in curvature radius. The substrate can be manufactured by manufacturing of an aluminum nitride monocrystalline substrate by the method of crystalline growth, thereafter grinding both of the crystal growth face of the monocrystalline substrate, and the rear face to the crystal growth face, and then polishing the monocrystalline substrate until both the faces reach a surface roughness Ra of 100 nm or less.SELECTED DRAWING: None
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Inventors:
ARIYUKI MASAO
NAGASHIMA TORU
FURUYA TAISHI
NAGASHIMA TORU
FURUYA TAISHI
Application Number:
JP2016220940A
Publication Date:
May 17, 2018
Filing Date:
November 11, 2016
Export Citation:
Assignee:
TOKUYAMA CORP
International Classes:
H01L21/205; B24B7/22; C30B29/38; H01L21/304; H01L33/02
Domestic Patent References:
| JP2015179734A | 2015-10-08 | |||
| JP2012188344A | 2012-10-04 | |||
| JP2011219297A | 2011-11-04 | |||
| JP2010047463A | 2010-03-04 |
Foreign References:
| WO2014042054A1 | 2014-03-20 | |||
| WO2016076270A1 | 2016-05-19 |