Title:
METHOD FOR MANUFACTURING FREE-STANDING SUBSTRATE, SUBSTRATE AND FREE-STANDING SUBSTRATE
Document Type and Number:
Japanese Patent JP2016155706
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To reduce dislocation density on the surface of a joint body in a method capable of obtaining a joint body of group III nitride semiconductor crystals by growing a group III nitride semiconductor crystal on a base substrate having pieces of group III nitride semiconductor crystal adjacently arranged each other to join the group III nitride semiconductor crystals grown from each piece of the crystals.SOLUTION: A method for manufacturing a free-standing substrate comprises: a mask formation step S10 of covering a boundary part between adjacent crystal pieces on a first surface of a base substrate formed by arranging two or more pieces of group III nitride semiconductor crystal to expose a portion without having the boundary part and forming a mask including an insulation layer; and a growth step S20 of growing a group III nitride semiconductor from the exposed portion of the base substrate to form a group III nitride semiconductor layer.SELECTED DRAWING: Figure 1
Inventors:
MATSUEDA TOSHIHARU
ISHIHARA YUJIRO
ISHIHARA YUJIRO
Application Number:
JP2015034266A
Publication Date:
September 01, 2016
Filing Date:
February 24, 2015
Export Citation:
Assignee:
FURUKAWA CO LTD
International Classes:
C30B29/38; C30B25/20
Domestic Patent References:
| JP2006315947A | 2006-11-24 | |||
| JP2010013298A | 2010-01-21 | |||
| JP2009286652A | 2009-12-10 |
Attorney, Agent or Firm:
Shinji Hayami