The manufacturing method of an oxide semiconductor device and an oxide semiconductor device, a display, an image sensor, and an X ray sensor

Japanese Patent JP6041796

B2

Disclosed is an oxide semiconductor element which has: an oxide semiconductor layer that contains at least one element selected from the group consisting of In, Zn, Ga and Sn; one pair of electrodes which can be electrically connected to each other through the oxide semiconductor layer; and an insulation protection layer. The insulation protection layer has a laminate structure which is composed of at least three layers and which is laminated on the oxide semiconductor layer. In the laminate structure, the first layer (24(1)) adjacent to the oxide semiconductor layer exhibits an absolute refractive index lower than that of the oxide semiconductor layer, while the second layer (24(2)) exhibits an absolute refractive index higher than that of the first layer (24(1)). In the second layer and the subsequent layers, the higher-lower relationships of absolute refractive index which are each between a layer and the precedent layer are alternately different. When the thickness of each layer, inclusive of the first layer (24(1)), is d(k) (nm) (wherein k represents the kth from the oxide semiconductor layer side) and the absolute refractive index of each layer is n(k), the insulation protection layer satisfies the relationship: 400(nm)/4n(k) ≤ d(k) (nm) ≤ 450(nm)/4n(k). Further, a process for producing an oxide semiconductor element and applications thereof are disclosed.

Fumihiko Mochizuki
Jun Tanaka
Masayuki Suzuki

JP2013258569A

December 14, 2016

December 13, 2013

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FUJIFILM Corporation

H01L21/336; G02F1/1368; G09F9/30; H01L27/144; H01L27/146; H01L29/786

JP11337974A
JP4982620B2

WO2012063436A1
WO2009153876A1
WO2009075281A1

Atsushi Nakajima
Kato Kazunori
Hiroshi Fukuda

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