Title:
A manufacturing method of p type thermoelectrical material, a thermoelement, and p type thermoelectrical material
Document Type and Number:
Japanese Patent JP6176885
Kind Code:
B2
Abstract:
A p-type thermoelectric material according to one aspect of the present invention is configured such that at least any one of a Mg site, a Si site, a Sn site and/or a Ge site in a compound composed of magnesium (Mg), silicon (Si), tin (Sn) and germanium (Ge) is substituted with any one or more elements selected from the group consisting of alkali metals of group 1A and gold (Au), silver (Ag), copper (Cu), zinc (Zn), calcium (Ca) and gallium (Ga) of group 1B.
Inventors:
Tomoki Tada
Yukihiro Isoda
Yukihiro Isoda
Application Number:
JP2016551946A
Publication Date:
August 09, 2017
Filing Date:
September 18, 2015
Export Citation:
Assignee:
Mitsuba Co., Ltd.
National Institute for Materials Science
National Institute for Materials Science
International Classes:
H01L35/14; C22C23/00; H01L35/34; H02N11/00
Domestic Patent References:
| JP2008160077A | ||||
| JP2013197550A | ||||
| JP2015026672A |
Foreign References:
| WO2010112956A1 | ||||
| US3782927 | ||||
| EP2770069A1 |
Other References:
ISODA Yukihiro et al.,Thermoelectric Performance of p-Type Mg2Si0.25Sn0.75 with Li and Ag Double Doping,Materials Transactions,2010年 2月 3日,Vol.51, No.5,pp.868-871
Fedorov, M.I. et al.,Transport properties of Mg2X0.4Sn0.6 solid solutions (X=Si,Ge) with p-type conductivity,Physics of the Solid State,2006年,Vol.48, No.8,pp.1486-1490
Fedorov, M.I. et al.,Transport properties of Mg2X0.4Sn0.6 solid solutions (X=Si,Ge) with p-type conductivity,Physics of the Solid State,2006年,Vol.48, No.8,pp.1486-1490
Attorney, Agent or Firm:
Masatake Shiga
Suzuki Mitsuyoshi
Suzuki Mitsuyoshi
Previous Patent: A device and a method for supplying adjusting current to electric load
Next Patent: X-RAY CONTROL DEVICE
Next Patent: X-RAY CONTROL DEVICE