Title:
PRODUCTION METHOD OF POLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND PRODUCTION METHOD OF RESIST COMPOSITION
Document Type and Number:
Japanese Patent JP2017110149
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a production method of a polymer for semiconductor lithography having a reduced amount of metal, and a production method of a resist composition by using a polymer for semiconductor lithography obtained by the above production method.SOLUTION: The production method of a polymer for semiconductor lithography includes: (preparation step) a step of preparing a monomer solution comprising a monomer component in a vessel; (polymerization step) a step of polymerizing the monomer component included in the monomer solution in a vessel to obtain a polymer solution A; (purification step) a step of pouring the polymer solution into a poor solvent in a vessel to precipitate the polymer and then carrying out solid-liquid separation to obtain a polymer wet powder; (dissolution step) a step of dissolving the polymer wet powder in a good solvent in a vessel to obtain a polymer solution B; and (concentration step) a step of concentrating the polymer solution B in a vessel under reduced pressure to remove the poor solvent in the polymer solution B. The vessels used in at least the dissolution step and in the concentration step are cleaned with only a solvent containing no water prior to the use.SELECTED DRAWING: None
More Like This:
| WO/1993/007183 | PROCESS FOR PRODUCING LOW VISCOSITY ISOCYANATE TRIMERS |
| WO/2016/011546 | ULTRAPURE COPOLYMERS |
Inventors:
MUKAI KAZUAKI
YASUDA ATSUSHI
KATO KEISUKE
MIHASHI TAKASHI
BANBA HIROYASU
YASUDA ATSUSHI
KATO KEISUKE
MIHASHI TAKASHI
BANBA HIROYASU
Application Number:
JP2015247191A
Publication Date:
June 22, 2017
Filing Date:
December 18, 2015
Export Citation:
Assignee:
MITSUBISHI CHEM CORP
International Classes:
C08F6/12; G03F7/26