Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2017017328
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a thin film transistor which has favorable electric characteristics and high reliability; and provide a display device using the thin film transistor as a switching element.SOLUTION: A channel-protective thin film transistor using an oxide semiconductor for a channel formation region uses an oxide semiconductor layer subjected to dehydration or dehydrogenation by a heat treatment for an active layer; and has a crystalline region on a surface part of a channel formation region composed of a nanocrystal, in which the other portion is formed by an amorphous material or by a mixture of an amorphous material and a microcrystal, where a microcrystal is scattered about an amorphous region. By using the oxide semiconductor layer having such composition, re-entry of moisture from the surface part or change to an N type due to oxygen desorption or the occurrence of a parasitic channel is inhibited, and contact resistance between a source electrode and a drain electrode can be decreased.SELECTED DRAWING: Figure 1
Inventors:
YAMAZAKI SHUNPEI
SAKAKURA MASAYUKI
WATANABE RYOSUKE
SAKATA JUNICHIRO
AKIMOTO KENGO
MIYANAGA SHOJI
HIROHASHI TAKUYA
KISHIDA HIDEYUKI
SAKAKURA MASAYUKI
WATANABE RYOSUKE
SAKATA JUNICHIRO
AKIMOTO KENGO
MIYANAGA SHOJI
HIROHASHI TAKUYA
KISHIDA HIDEYUKI
Application Number:
JP2016161653A
Publication Date:
January 19, 2017
Filing Date:
August 22, 2016
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L21/336; H01L21/28; H01L29/417; H01L29/786; H01L51/50; H05B33/14
Domestic Patent References:
| JP2008281988A | 2008-11-20 | |||
| JP2007284342A | 2007-11-01 | |||
| JP2009099847A | 2009-05-07 | |||
| JP2008166716A | 2008-07-17 | |||
| JP2009099953A | 2009-05-07 |
Foreign References:
| WO2009093625A1 | 2009-07-30 | |||
| WO2009075281A1 | 2009-06-18 |