Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2017168849
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a thin film transistor using an oxide semiconductor as an active layer, which prevents a change in a composition and film quality and an interface of an oxide semiconductor region which forms the active layer to stabilize electrical characteristics of the thin film transistor.SOLUTION: In a thin film transistor which uses a first oxide semiconductor region as an active layer, by forming between the first oxide semiconductor region and a protective insulation layer of the thin film transistor, a second oxide semiconductor region having a conductivity lower than that of the first oxide semiconductor, the second oxide semiconductor region functions as a protective layer of the first oxide semiconductor region so that a change in a composition of the first oxide semiconductor region and deterioration in film quality are prevented thereby to enable stabilization of electrical characteristics of the thin film transistor.SELECTED DRAWING: Figure 1
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Inventors:
AKIMOTO KENGO
SASAKI TOSHINARI
KUWABARA HIDEAKI
SASAKI TOSHINARI
KUWABARA HIDEAKI
Application Number:
JP2017078621A
Publication Date:
September 21, 2017
Filing Date:
April 12, 2017
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L29/786; G02F1/1343; G02F1/1368; H01L21/28
Domestic Patent References:
| JP2007096055A | 2007-04-12 | |||
| JP2008276212A | 2008-11-13 | |||
| JP2008199005A | 2008-08-28 | |||
| JP2008042088A | 2008-02-21 | |||
| JP2007220819A | 2007-08-30 |