半導体装置の作製方法 - Incorporated company semiconductor energy research institute

Title:

半導体装置の作製方法

Document Type and Number:

Japanese Patent JP5580010

Kind Code:

B2

Abstract:

After a single crystal semiconductor layer provided over a base substrate by attaching is irradiated with a laser beam, characteristics thereof are improved by first heat treatment, and after adding an impurity element imparting conductivity to the single crystal semiconductor layer, second heat treatment is performed at lower temperature than that of the first heat treatment.

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Inventors:

Takashi Ozawa
Atsuo Isobe
Hamada 崇
Peach Junpei
Honda Large chapter
Takashi Shingu
掛端 Tetsuya

Application Number:

JP2009200050A

Publication Date:

August 27, 2014

Filing Date:

August 31, 2009

Export Citation:

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Assignee:

Incorporated company semiconductor energy research institute

International Classes:

H01L21/02; H01L27/12; H01L21/336; H01L29/786

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