Title:
A manufacturing method of a silicon carbide semiconductor device
Document Type and Number:
Japanese Patent JP6233436
Kind Code:
B2
Inventors:
Hideki Hayashi
Takeyoshi Masuda
Takeyoshi Masuda
Application Number:
JP2016056728A
Publication Date:
November 22, 2017
Filing Date:
March 22, 2016
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01L29/12; H01L21/336; H01L29/78
Domestic Patent References:
| JP2010147182A | ||||
| JP2007027266A |
Foreign References:
| WO2012017798A1 |
Attorney, Agent or Firm:
Fukami patent office