Title:
A manufacturing method of a substrate processing device and a semiconductor device
Document Type and Number:
Japanese Patent JP6257071
Kind Code:
B2
Abstract:
A substrate processing apparatus includes a substrate processing chamber including a plasma generation space where a plasma is generated and a substrate processing space where a substrate is placed during a substrate process; an inductive coupling structure outside the plasma generation space wherein a sum of electrical lengths of a coil of the inductive coupling structure and a waveform adjustment circuit connected to the coil is an integer multiple of a wavelength of an applied power; a substrate mounting table in the substrate processing space and supporting the substrate including grooves having high aspect ratios with a silicon-containing layer disposed thereon; a substrate transfer port at a wall of the substrate processing chamber; a substrate mounting table elevator moving the substrate mounting table upward/downward; an oxygen gas supply system to supply an oxygen-containing gas into the plasma generation space; and an exhaust unit exhausting gas from the substrate processing chamber.
Inventors:
Tadashi Terasaki
Masanori Nakayama
Takeshita Mitsunori
Katsunori Funaki
Masanori Nakayama
Takeshita Mitsunori
Katsunori Funaki
Application Number:
JP2013186834A
Publication Date:
January 10, 2018
Filing Date:
September 10, 2013
Export Citation:
Assignee:
Hitachi Kokusai Electric Co., Ltd.
International Classes:
H01L21/31; C23C16/505; H01L21/316; H05H1/46
Domestic Patent References:
| JP2012516577A | ||||
| JP2012114267A | ||||
| JP2003037101A | ||||
| JP5226324A | ||||
| JP2002280369A | ||||
| JP2010232240A |
Foreign References:
| US20100216317 |