Title:
The manufacturing method, a substrate treating method, a substrate processing device, and a program of a semiconductor device
Document Type and Number:
Japanese Patent JP6035161
Kind Code:
B2
Abstract:
An object of the present invention is to form a good thin film while suppressing generation of foreign substances in a low temperature region. Provided is a method of manufacturing a semiconductor device, including: (a) forming a thin film containing at least a predetermined element and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a source gas containing the predetermined element and a halogen element to the substrate in a process container; and (a-2) supplying a reaction gas composed of carbon, nitrogen, and hydrogen to the substrate in the process container; and (b) modifying byproduct adhered to an inside of the process container by supplying a nitriding gas into the process container after (a).
Inventors:
Satoshi Shimamoto
Yugo Watahashi
Yoshitomo Hashimoto
Yugo Watahashi
Yoshitomo Hashimoto
Application Number:
JP2013025016A
Publication Date:
November 30, 2016
Filing Date:
February 12, 2013
Export Citation:
Assignee:
Hitachi Kokusai Electric Co., Ltd.
International Classes:
H01L21/318; C23C16/42; C23C16/455; C23C16/56; H01L21/31
Domestic Patent References:
| JP2009283587A | ||||
| JP2012019194A | ||||
| JP2008507845A | ||||
| JP2011134781A | ||||
| JP2006351582A | ||||
| JP2006108722A | ||||
| JP2001023904A | ||||
| JP2013140946A |
Foreign References:
| WO2011125395A1 |
Attorney, Agent or Firm:
Fukuoka Masahiro
Aniya Setsuo
Hitoshi Kiyono
Aniya Setsuo
Hitoshi Kiyono
Previous Patent: The casing of a pumping plant
Next Patent: CONTROL DEVICE OF FUEL INJECTION TIMING IN DIESEL ENGINE
Next Patent: CONTROL DEVICE OF FUEL INJECTION TIMING IN DIESEL ENGINE