Silicon substrate surface treatment method, semiconductor device manufacturing method, semiconductor manufacturing device, transfer member and its manufacturing method, solar cell and solar cell manufacturing method

Title:

Document Type and Number:

Japanese Patent JP6359519

Kind Code:

B2

Abstract:

[Solution] A surface treatment method for a silicon substrate, being one embodiment of the present invention and whereby a second metal having a minute catalytic function is supported on the surface of a transfer member comprising a first metal having a catalytic function, and is brought into contact upon or brought close to the silicon substrate, in a treatment solution capable of oxidizing and dissolving silicon, thereby forming a nanocrystal structural layer on a surface section of the silicon substrate. As a result the reflectivity for a visible light area on the silicon substrate surface is reduced slightly by no more than 2-3% and a solar cell having high photoelectric conversion can be obtained.

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Inventors:

Hikaru Kobayashi
Kentaro Imamura

Application Number:

JP2015505598A

Publication Date:

July 18, 2018

Filing Date:

March 14, 2014

Export Citation:

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Assignee:

Hikaru Kobayashi

International Classes:

H01L21/306; H01L31/0216; H01L31/068; H01L31/18

Domestic Patent References:

JP2005183505A
JP201341864A

Foreign References:

WO2013024746A1
WO2011099594A1
US20110294255
US20070238275

Other References:

入鹿大地 Daichi Irishika 他,化学的転写法を用いた極低反射Si表面の創製 Ultra-low Reflectivity Si Surfaces Fabricated by Surface,<第60回>応用物理学関係連合講演会講演予稿集,日本,公益社団法人応用物理学会,2013年 3月11日,30p-A4-5,p.16-120
Francisco Franco Jr et al.,Ultra-low reflectivity poly-crystalline Si surfaces fabricated by surface structure chemical transfe,<第60回>応用物理学関係連合講演会講演予稿集,日本,公益社団法人応用物理学会,2013年 3月11日,30p-A4-6,p.16-121

Attorney, Agent or Firm:

Hiroaki Kono

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