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Title:
METHOD FOR IMPEDANCE MATCHING OF PLASMA PROCESSING APPARATUS
Document Type and Number:
Japanese Patent JP2017073247
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for impedance matching of a plasma processing apparatus, which adjusts a frequency of a high frequency according to fluctuations of an impedance on a load side of a high frequency power source in an adaptive manner and at a high speed.SOLUTION: An output of a modulation high frequency MRF1 set so that a power in a second period T2 alternately repeated with a first period T1 is smaller than the power in the first period T1 is started by a high frequency power source of a plasma processing apparatus. Subsequently, moving average values of an impedance of a load side of the high frequency power source of a first sub-period Ts1 in the past first period T1 and moving average values of the impedance of the load side of high frequency power source of a second sub-period Ts2 of the past first period T1 are obtained. Next, the frequency of modulation high frequency in the first sub-period Ts1 and the frequency of modulation high frequency in the second sub-period Ts2 are set in accordance with the moving average values.SELECTED DRAWING: Figure 18

Inventors:
NAGAUMI KOICHI
UMEHARA NAOYUKI
YAMADA NORIKAZU
Application Number:
JP2015198314A
Publication Date:
April 13, 2017
Filing Date:
October 06, 2015
Export Citation:
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Assignee:
TOKYO ELECTRON LTD
International Classes:
H05H1/46; H01L21/3065
Domestic Patent References:
JP2013191554A2013-09-26
JPH1064696A1998-03-06
JP2013125892A2013-06-24
JP2012174736A2012-09-10
JP2008181846A2008-08-07
Foreign References:
US20150206716A12015-07-23
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Junji Kashiwaoka



 
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