A nitride semiconductor device, a manufacturing method for the same, a diode, and a field effect transistor

Title:

A nitride semiconductor device, a manufacturing method for the same, a diode, and a field effect transistor

Document Type and Number:

Japanese Patent JP6168978

Kind Code:

B2

Inventors:

Umeno Kazuyuki
Shinya Otomo
Hiroshi Takagi
Hiroi Ishii

Application Number:

JP2013254403A

Publication Date:

July 26, 2017

Filing Date:

December 09, 2013

Export Citation:

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Assignee:

THE FURUKAW ELECTRIC CO.,LTD.

International Classes:

H01L29/872; H01L21/205; H01L21/28; H01L21/336; H01L21/338; H01L29/06; H01L29/41; H01L29/47; H01L29/778; H01L29/78; H01L29/812

Domestic Patent References:

JP2014086706A
JP2012227227A
JP2005285870A

Foreign References:

US20140008615

Attorney, Agent or Firm:

Hiroaki Sakai
Tashiro Toshio

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