Title:
METHOD OF PATTERN FORMATION AND METHOD OF PRODUCING POLYSILANE RESIN PRECURSOR
Document Type and Number:
Japanese Patent JP2018109762
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method of pattern formation that is capable of inhibiting a post-development residue from remaining on a support equipped with an electrode, and a method of producing a polysilane-polysiloxane resin precursor that is suitable for use in the method of pattern formation.SOLUTION: A method of pattern formation includes the steps of forming a film of a silicon-containing composition on the support equipped with an electrode, forming a film of a resin composition on the film of a silicon-containing composition, and forming the film of a resin composition into a pattern.SELECTED DRAWING: None
Inventors:
CHISAKA HIROKI
NODA KUNIHIRO
SOMEYA KAZUYA
SHIODA MASARU
NODA KUNIHIRO
SOMEYA KAZUYA
SHIODA MASARU
Application Number:
JP2017247035A
Publication Date:
July 12, 2018
Filing Date:
December 22, 2017
Export Citation:
Assignee:
TOKYO OHKA KOGYO CO LTD
International Classes:
G03F7/11; C08G77/42; G03F7/20
Domestic Patent References:
| JP2016074772A | 2016-05-12 |
Attorney, Agent or Firm:
Masayuki Masabayashi