Title:
PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE
Document Type and Number:
Japanese Patent JP2017017324
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide: an imaging device with excellent imaging performance; an imaging device that easily performs imaging under a low illuminance condition; a low power consumption imaging device; an imaging device with small variations in characteristics between its pixels; or a highly integrated imaging device.SOLUTION: A photoelectric conversion element includes a first electrode, and a first layer, a second layer, and a third layer. The first layer is provided between the first electrode and the third layer. The second layer is provided between the first layer and the third layer. The first layer contains selenium. The second layer contains a metal oxide. The third layer contains a metal oxide and also contains at least one of a rare gas atom, phosphorus, and boron. The selenium may be crystalline selenium. The second layer may be a layer of an In-Ga-Zn oxide including c-axis-aligned crystals.SELECTED DRAWING: Figure 1
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Inventors:
YAMAZAKI SHUNPEI
NONAKA YUSUKE
KATAISHI RIHO
OKI HIROSHI
SATO YUICHI
MATSUBAYASHI DAISUKE
NONAKA YUSUKE
KATAISHI RIHO
OKI HIROSHI
SATO YUICHI
MATSUBAYASHI DAISUKE
Application Number:
JP2016129999A
Publication Date:
January 19, 2017
Filing Date:
June 30, 2016
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L31/107; H01L27/14; H01L27/146; H01L29/786; H04N5/369
Domestic Patent References:
| JP2012169517A | 2012-09-06 | |||
| JP2014120616A | 2014-06-30 | |||
| JP2015503847A | 2015-02-02 |
Foreign References:
| US20100181487A1 | 2010-07-22 |