Title:
A power semiconductor module and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP5986488
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve heat radiation performance of an entire module while achieving downsizing of an insulation substrate.SOLUTION: A power semiconductor module 100 including an insulation substrate 1, a power semiconductor chip 201 mounted on the insulation substrate 1 and an enclosure case 2 comprises a frame-like spacer 3 having a front side part 3a, a back side part 3b, a right side part 3c, a left side part 3d and a central opening 3e which penetrates in a vertical direction. The spacer 3 is formed by a highly heat-conductive material having heat conductivity higher than that of a resin material which is composed the enclosure case 2. The central opening 3e of the spacer 3 is formed into a complementary shape for the insulation substrate 1. The insulation substrate 1 is fitted with the central opening 3e of the spacer 3 to be connected with the spacer 3 such that an undersurface of a metal layer 1b of the insulation substrate 1 lies in the same plane with an undersurface of the spacer 3. The insulation substrate 1 and the spacer 3 are connected to a lower end of the enclosure case 2.
Inventors:
Fukuda Eigo
Yasushi Nemoto
Yasushi Nemoto
Application Number:
JP2012254815A
Publication Date:
September 06, 2016
Filing Date:
November 21, 2012
Export Citation:
Assignee:
Nippon Inter Co., Ltd.
International Classes:
H01L25/07; H01L23/28; H01L23/29; H01L25/18
Domestic Patent References:
| JP11087610A | ||||
| JP2004134491A | ||||
| JP2008252055A | ||||
| JP9008223A | ||||
| JP2000133769A | ||||
| JP2000031375A | ||||
| JP2011187711A |
Attorney, Agent or Firm:
Kisaragi International Patent Business Corporation