Title:
音響信号または熱信号と電圧変化とを互いに変換するための層配列を備えた半導体素子、および、その製造方法
Document Type and Number:
Japanese Patent JP3838359
Kind Code:
B2
Abstract:
A semiconductor component is provided having a layer sequence for conversion of acoustic to thermal signals and electrical voltage changes to one another, as well as a process for its production. The layer sequence has a lower electrode, an upper electrode and a layer which is arranged between them and is piezoelectrical or pyroelectrical. An auxiliary layer is arranged between the lower electrode and the layer and is used for homogeneously oriented growth of the layer during the production process. The auxiliary layer preferably consists essentially of amorphous silicon, amorphous silicon oxide or amorphous silicon nitride.
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Inventors:
Aigner, Robert
Erbrecht, Lüder
Hair Talk, Thomas Rainer
Marc Steiner, Stephan
Nessler, Vinfried
Erbrecht, Lüder
Hair Talk, Thomas Rainer
Marc Steiner, Stephan
Nessler, Vinfried
Application Number:
JP2002514747A
Publication Date:
October 25, 2006
Filing Date:
July 03, 2001
Export Citation:
Assignee:
Infineon Technologies AG
International Classes:
H01L21/28; H01L37/02; H01L41/08; H01L41/09; H01L41/22; H01L41/319; H03H3/02; H03H9/17
Domestic Patent References:
| JP9083029A | ||||
| JP9130199A | ||||
| JP63187713A | ||||
| JP2001274650A | ||||
| JP2001313535A |
Other References:
Joseph J. Lutsky et al.,A Sealed Cavity TFR Process for RF Bandpass Filters,1996 INTERNATIONAL ELECTRON DEVICES MEETING,米国,1996年12月 8日,第95頁-第97頁
Attorney, Agent or Firm:
Kenzo Hara
Ryuichi Kijima
Ichiro Kaneko
Ryuichi Kijima
Ichiro Kaneko
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