Title:
A semiconductor device and a method for controlling the same
Document Type and Number:
Japanese Patent JP6021688
Kind Code:
B2
Abstract:
A memory cell is included which has a selection transistor and a variable resistance device connected to a bit line through the selection transistor. The variable resistance device includes a first electrode which has a first metal material and is connected to the selection transistor, a second electrode which has a second metal material different from the first metal material, and an insulating film which is provided between the first electrode and the second electrode, has a third metal material different from the first metal material and the second metal material, and has oxygen. The second metal material has a greater normalized oxide formation energy than the first metal material.
Inventors:
Masayuki Terai
Application Number:
JP2013034839A
Publication Date:
November 09, 2016
Filing Date:
February 25, 2013
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
H01L27/105; H01L45/00; H01L49/00
Domestic Patent References:
| JP2010015662A | ||||
| JP2013012285A |
Foreign References:
| WO2012098897A1 |
Attorney, Agent or Firm:
Shinji Hayami
Satoshi Amagi
Satoshi Amagi
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