Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023135280
Kind Code:
A
Abstract:
To provide semiconductor devices that can be miniaturized.SOLUTION: A semiconductor device has a semiconductor substrate of the first conductivity type; a semiconductor layer of the first conductivity type provided on the semiconductor substrate and including a first device portion; an embedding layer of the second conductivity type provided between the semiconductor substrate and the first device portion; a guard region of the second conductivity type whose bottom edge contacts the embedding layer and whose top edge reaches the top surface of the semiconductor layer and is disposed on the first direction side of the first device portion and not on the second direction side opposite to the first direction; and a first semiconductor region of the second conductivity type located within the first device portion.SELECTED DRAWING: Figure 1
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Inventors:
KOMATSU KANAKO
ISHII YOSHIAKI
SHINOHARA DAISUKE
ISHII YOSHIAKI
SHINOHARA DAISUKE
Application Number:
JP2022040411A
Publication Date:
September 28, 2023
Filing Date:
March 15, 2022
Export Citation:
Assignee:
TOSHIBA CORP
TOSHIBA ELECTRONIC DEVICES & STORAGE CORP
TOSHIBA ELECTRONIC DEVICES & STORAGE CORP
International Classes:
H01L21/336; H01L21/761; H01L21/822; H01L21/8234; H01L27/088; H01L29/06
Attorney, Agent or Firm:
Patent Attorney Firm iX
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