Title:
A semiconductor memory device which operates with low electric power
Document Type and Number:
Japanese Patent JP5940924
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor storage device having phase change memory cells in which the current and power needed for reset operation are reduced and rewrite tolerance (endurance) is improved, and which can be easily optimized against phase change memory processing condition and design alterations.SOLUTION: In a semiconductor storage device of the present invention, a phase change layer formed on a semiconductor substrate and composed of a phase change material and an interlayer abutting on the phase change layer are provided between a first electrode and a second electrode. The phase change layer has GexSbyTez alloy adopted therefor, and the interlayer has adopted therefor a material which is the same GexSbyTez alloy as for the phase change layer and contains ZrOor YSZ(yttria-stabilized zirconia) added thereto. By taking advantage of a characteristic that film resistivity changes significantly when ZrOor YSZ is added to the GexSbyTez alloy, the interlayer has its film resistivity controlled by controlling the added amount of ZrO.
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Inventors:
Mitsuharu Tai
Norikatsu Takaura
Takazumi Oyanagi
Katsuji Kinoshita
Tadashi Kitamura
Norikatsu Takaura
Takazumi Oyanagi
Katsuji Kinoshita
Tadashi Kitamura
Application Number:
JP2012161072A
Publication Date:
June 29, 2016
Filing Date:
July 20, 2012
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
H01L27/105; H01L45/00
Domestic Patent References:
| JP2010080709A | ||||
| JP2010062247A | ||||
| JP2008085071A | ||||
| JP2008130804A |
Foreign References:
| WO2008090621A1 | ||||
| WO2010140210A1 | ||||
| US20070076486 | ||||
| US20110079764 |
Attorney, Agent or Firm:
Aoritsu patent business corporation
Polaire Patent Business Corporation
Polaire Patent Business Corporation
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