Title:
サセプタおよび該サセプタを用いたエピタキシャルウェーハの製造方法
Document Type and Number:
Japanese Patent JP6841218
Kind Code:
B2
Abstract:
To provide a susceptor capable of making the film thickness uniformity of an epitaxial layer more uniform, and a manufacturing method of an epitaxial wafer using the susceptor.SOLUTION: A susceptor for mounting a semiconductor wafer according to the present invention having a central axis in the furnace of a single-wafer epitaxial growth apparatus and a central axis of rotation of the susceptor as concentric axes is provided with a concave counterbore portion 110 in which a semiconductor wafer W is placed, and the susceptor rotation center axis Cof the susceptor 100 and the rotation center axis Cof the counterbore bottom surface 110B of the counterbore portion 110 are eccentric.SELECTED DRAWING: Figure 3
Inventors:
Nakamura Motoyoshi
Application Number:
JP2017248303A
Publication Date:
March 10, 2021
Filing Date:
December 25, 2017
Export Citation:
Assignee:
Sumco inc.
International Classes:
H01L21/205; C23C16/455; C30B25/12; C30B29/06; H01L21/683
Domestic Patent References:
| JP4290448A | ||||
| JP10150095A | ||||
| JP2002261036A | ||||
| JP2007294942A | ||||
| JP2011060979A | ||||
| JP2016092156A |
Attorney, Agent or Firm:
Kenji Sugimura
Mitsutsugu Sugimura
Keisuke Kawahara
Toshio Fukui
Mitsutsugu Sugimura
Keisuke Kawahara
Toshio Fukui