Title:
THIN FILM DEVICE AND MANUFACTURING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2016178335
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To solve a problem of a TFT using an oxide semiconductor film that oxygen deficiency occurs in a surface region of the oxide semiconductor film after plasma etching of a source/drain electrode to increase an off-state current.SOLUTION: A TFT 104 has a gate electrode 11 on an insulating substrate 10, a gate insulation film 12 on the gate electrode 11, an oxide semiconductor film 13 on the gate insulation film 12 and a source/drain electrode 14 on the oxide semiconductor film 13. Features of the TFT 104 lie in the matter that a surface layer 15 containing at least one of fluorine and chlorine exists on a portion of the oxide semiconductor film 13 where the source/drain electrode 14 does not overlap and a portion of the oxide semiconductor film 13 where the source/drain electrode 14 overlaps, and the TFT further has a channel protective insulation film 20 on the surface layer 15.SELECTED DRAWING: Figure 6
Inventors:
TAKECHI KAZUE
Application Number:
JP2016115997A
Publication Date:
October 06, 2016
Filing Date:
June 10, 2016
Export Citation:
Assignee:
NLT TECHNOLOGIES LTD
International Classes:
H01L29/786
Domestic Patent References:
| JP2011109078A | 2011-06-02 | |||
| JP2010050165A | 2010-03-04 | |||
| JP2010232647A | 2010-10-14 |
Foreign References:
| US20080283831A1 | 2008-11-20 | |||
| WO2010061554A1 | 2010-06-03 | |||
| US20110133176A1 | 2011-06-09 | |||
| US20110141076A1 | 2011-06-16 |
Attorney, Agent or Firm:
Isamu Takahashi