Title:
[110] ORIENTED GROUP IV-VI SEMICONDUCTOR STRUCTURE, AND METHOD FOR MAKING AND USING THE SAME
Document Type and Number:
WIPO Patent Application WO2005076976
Kind Code:
A3
Abstract:
A method of growing and fabricating a group IV-VI semiconductor structure, for use in fabricating devices. In one embodiment, the group IV-VI semiconductor structure produced by the method of the present invention includes a group IV-IV material grown on a selected orientation of [110]. The devices fabricated can be a laser, detector, solar cell, thermal electrical cooling devices, etc. A laser device produced according to the present method will have a low threshold due to t he lift-off of the energy degeneracy and low defect density. Growth on the [110] orientation also allows epitaxial growth of the semiconductor structure on a dissimilar substrate, which could improve the thermal dissipation and thus increase the operating temperature of the laser device.
Inventors:
ZHISHENG SHI (US)
Application Number:
PCT/US2005/003756
Publication Date:
July 13, 2006
Filing Date:
February 04, 2005
Export Citation:
Assignee:
UNIV OKLAHOMA (US)
ZHISHENG SHI (US)
ZHISHENG SHI (US)
International Classes:
H01S5/00; H01L29/00; H01L47/00; H01S5/32
Foreign References:
| US20020119680A1 | 2002-08-29 | |||
| US4542512A | 1985-09-17 |
Other References:
See also references of EP 1714359A4
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