Title:
1S1R-TYPE MEMORY INTEGRATED STRUCTURE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/262651
Kind Code:
A1
Abstract:
Provided in the present invention is a preparation method for a 1S1R-type memory integrated structure. The method comprises: preparing a gating device and a resistive random access memory; and connecting the gating device to the resistive random access memory in series. In the preparation method, two spin-coating solutions, which have the same element composition and different concentrations, are respectively used in cooperation with an anti-dissolution agent, and are then deposited onto two flexible conductive substrates by means of a low-temperature spin-coating process, such that resistive layers, which are covered by conductive surfaces of the two flexible conductive substrates, have the same element composition and different thicknesses; then, by means of step S3, different metal materials are respectively deposited onto the surfaces of the resistive layers, which have different thicknesses, to form different top electrodes, such that a gating device and a resistive random access memory can be obtained; and the process is simple, and by means of step S4, after a forward voltage is applied to the top electrode of the gating device for excitation, the gating device and the resistive random access memory are connected in series to obtain a 1S1R-type memory integrated structure, thereby realizing flexible integration of the 1S1R-type structure. Further provided in the present invention is a 1S1R-type memory integrated structure.
Inventors:
WANG CHEN (CN)
ZHANG WEI (CN)
HUANG YANG (CN)
TANG LINGZHI (CN)
ZHANG WEI (CN)
HUANG YANG (CN)
TANG LINGZHI (CN)
Application Number:
PCT/CN2022/098053
Publication Date:
December 22, 2022
Filing Date:
June 10, 2022
Export Citation:
Assignee:
UNIV FUDAN (CN)
INTEGRATED CIRCUIT MFG INNOVATION CENTER CO LTD (CN)
INTEGRATED CIRCUIT MFG INNOVATION CENTER CO LTD (CN)
International Classes:
H01L45/00
Domestic Patent References:
| WO2021108367A1 | 2021-06-03 |
Foreign References:
| CN113421964A | 2021-09-21 | |||
| CN109755388A | 2019-05-14 | |||
| CN108735898A | 2018-11-02 | |||
| CN103715354A | 2014-04-09 | |||
| CN110635028A | 2019-12-31 |
Other References:
SUN YANMEI, WEN DIANZHONG: "Logic Function and Random Number Generator Build Based on Perovskite Resistive Switching Memory and Performance Conversion via Flexible Bending", ACS APPLIED ELECTRONIC MATERIALS, AMERICAN CHEMICAL SOCIETY, vol. 2, no. 2, 25 February 2020 (2020-02-25), pages 618 - 625, XP093014855, ISSN: 2637-6113, DOI: 10.1021/acsaelm.9b00836
Attorney, Agent or Firm:
SHANGHAI IFUTURE INTELLECTUAL PROPERTY LAW FIRM (CN)
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