Title:
ACCELERATION SENSOR
Document Type and Number:
WIPO Patent Application WO/2016/103344
Kind Code:
A1
Abstract:
Provided is a technology of achieving a highly sensitive acceleration sensor. Specifically, a fixed section FU1A and a mass body MS are connected to each other by means of a beam BM1A formed in a silicon layer SL1, and a beam BM2A formed in a silicon layer SL2, and a fixed section FU1B and the mass body MS are connected to each other by means of a beam BM1B formed in the silicon layer SL1, and a beam BM2B formed in a silicon layer SL2. Consequently, movement (noise component) different from x-direction displacement (signal component) of the mass body MS can be suppressed, said displacement contributing to improvement of detection sensitivity of x-direction acceleration, and as a result, detection sensitivity of small acceleration in the x direction can be improved.
More Like This:
JP6036609 | Semiconductor device and its producing method |
JP3079961 | [Title of Invention] Impact Sensor |
JP2012183612 | MEMS DEVICE |
Inventors:
ISOBE ATSUSHI (JP)
KAMADA YUUDAI (JP)
SHIOTA TAKASHI (JP)
TAKUBO CHISAKI (JP)
SAKUMA NORIYUKI (JP)
KAMADA YUUDAI (JP)
SHIOTA TAKASHI (JP)
TAKUBO CHISAKI (JP)
SAKUMA NORIYUKI (JP)
Application Number:
PCT/JP2014/084061
Publication Date:
June 30, 2016
Filing Date:
December 24, 2014
Export Citation:
Assignee:
HITACHI LTD (JP)
International Classes:
G01P15/125; G01P15/08
Foreign References:
US4851080A | 1989-07-25 | |||
JP2014032200A | 2014-02-20 | |||
JP2012163415A | 2012-08-30 | |||
JPH1114658A | 1999-01-22 |
Attorney, Agent or Firm:
TSUTSUI, YAMATO (JP)
Tsutsui Daiwa (JP)
Tsutsui Daiwa (JP)
Download PDF: