Title:
ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, AND MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2017/007002
Kind Code:
A1
Abstract:
The present invention suppresses the formation of a protrusion on the surface of an insulating film provided between a substrate and a thin-film transistor (TFT) or the substrate. An active matrix substrate is provided with an insulation substrate (100), a surface cover film (110) for covering at least a portion of the surface of the insulation substrate, an insulating optically transparent film (204) provided on the insulation substrate including the surface cover film, a gate wire, a gate insulation film, a thin-film transistor, a data line, and a lead wire (115). A region not provided with the insulating optically transparent film is formed on the periphery of the insulation substrate. The lead wire is provided so as to intersect the outer circumference edge of the insulating optically transparent film as viewed from the direction perpendicular to the insulation substrate. The surface cover film is also provided in a portion of the area where the insulating optically transparent film is not provided, the portion being in contact with the outer circumference edge of the insulating optically transparent film.
Inventors:
KOSAKA TOMOHIRO
HARA TAKESHI
OKABE TOHRU
ISHIDA IZUMI
MURASHIGE SHOGO
KITOH KENICHI
NISHIKI HIROHIKO
HARA TAKESHI
OKABE TOHRU
ISHIDA IZUMI
MURASHIGE SHOGO
KITOH KENICHI
NISHIKI HIROHIKO
Application Number:
PCT/JP2016/070175
Publication Date:
January 12, 2017
Filing Date:
July 07, 2016
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
G09F9/30; G02F1/1333; G02F1/1368; G09F9/00; H01L21/336; H01L27/32; H01L29/786; H01L51/50; H05B33/02; H05B33/22
Domestic Patent References:
| WO2011013434A1 | 2011-02-03 |
Foreign References:
| JP2013037293A | 2013-02-21 | |||
| JP2008533510A | 2008-08-21 | |||
| JPH1020339A | 1998-01-23 | |||
| JP2002351354A | 2002-12-06 |
Attorney, Agent or Firm:
KAWAKAMI Keiko et al. (JP)
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