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Title:
Ag ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/085365
Kind Code:
A1
Abstract:
Provided is a novel Ag alloy bonding wire for a semiconductor device, the wire being required for high-density mounting and having an excellent performance for deforming into a pressed-ball during the ball bonding. The Ag alloy bonding wire for a semiconductor device contains at least one element selected from the group consisting of Te, Bi, and Sb, and comprises Ag alloy that satisfies at least one among the following conditions (1)-(3): (1) The concentration of Te is 5-500 at. ppm; (2) The concentration of Bi is 5-500 at. ppm; and (3) The concentration of Sb is 5-1,500 at. ppm.

Inventors:
ARAKI NORITOSHI (JP)
OOKABE TAKUMI (JP)
ODA DAIZO (JP)
UNO TOMOHIRO (JP)
OYAMADA TETSUYA (JP)
Application Number:
PCT/JP2021/035095
Publication Date:
April 28, 2022
Filing Date:
September 24, 2021
Export Citation:
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Assignee:
NIPPON MICROMETAL CORP (JP)
NIPPON STEEL CHEMICAL & MAT CO LTD (JP)
International Classes:
C22C5/06; C22F1/00; C22F1/14; H01L21/60
Domestic Patent References:
WO2020208839A12020-10-15
Foreign References:
JP2014201797A2014-10-27
JPS60162741A1985-08-24
JP2014222725A2014-11-27
JPS6417436A1989-01-20
JPH01110741A1989-04-27
JP2001176912A2001-06-29
CN103985687A2014-08-13
JPH11288962A1999-10-19
JP2012169374A2012-09-06
JP2020150116A2020-09-17
JP2002246542A2002-08-30
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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