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Title:
Ag ALLOY SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2015/008540
Kind Code:
A1
Abstract:
The present invention provides an Ag alloy sputtering target by which it is possible to perform stable DC sputtering. This Ag alloy sputtering target contains 0.1-1.5 mass% In, the balance being a composition comprising Ag and unavoidable impurities, the concentration of oxygen being 50 mass ppm or less. In the entire area in the direction of thickness of the target, the proportion of area of a crushed void portion measured by an ultrasonic damage detection device is 1.0×10-4 or less in relation to the area of the sputtering surface.

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Inventors:
NONAKA SOHEI (JP)
KOMIYAMA SHOZO (JP)
Application Number:
PCT/JP2014/063946
Publication Date:
January 22, 2015
Filing Date:
May 27, 2014
Export Citation:
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Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C23C14/34; C22C5/06; H01L51/50; H05B33/10; H05B33/24; H05B33/26
Domestic Patent References:
WO2002077317A12002-10-03
Foreign References:
JP2011100719A2011-05-19
JP2001357559A2001-12-26
JP2003064473A2003-03-05
JP2007088014A2007-04-05
JP2003293054A2003-10-15
JP2004149861A2004-05-27
JP2013204052A2013-10-07
JP2013216976A2013-10-24
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
Masatake Shiga (JP)
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