Title:
Ag-Au-Pd TERNARY ALLOY-BASED BONDING WIRE
Document Type and Number:
WIPO Patent Application WO/2012/108082
Kind Code:
A1
Abstract:
[Problem] To improve the reliability at which a bonding wire for semiconductors that is used in high-temperature and high-humidity environments is bonded to an aluminum pad. [Solution] A ternary-alloy-based wire comprising 4-10 mass% of gold having a purity equal to or greater than 99.999 mass%, and 2-5 mass% of palladium having a purity equal to or greater than 99.99 mass%, the remainder being constituted by silver having a purity equal to or greater than 99.999 mass%. The bonding wire for semiconductors contains 15-70 wt ppm of an oxidizing non-noble metal j element, and is subjected to an annealing heat treatment before being continuously drawn using a die, to a refining heat treatment after being continuously drawn using a die, and to ball-bonding in a nitrogen atmosphere. Corrosion between an Ag2Al intermetallic compound layer and the Ag-Au-Pd ternary alloy wire at the bonding interface between an aluminum pad and the wire is inhibited by Au2Al and a Pd-rich layer.
Inventors:
CHIBA JUN (JP)
TESHIMA SATOSHI (JP)
KOBAYASHI TASUKU (JP)
ANTOKU YUKI (JP)
TESHIMA SATOSHI (JP)
KOBAYASHI TASUKU (JP)
ANTOKU YUKI (JP)
Application Number:
PCT/JP2011/075160
Publication Date:
August 16, 2012
Filing Date:
November 01, 2011
Export Citation:
Assignee:
TANAKA ELECTRONICS IND (JP)
CHIBA JUN (JP)
TESHIMA SATOSHI (JP)
KOBAYASHI TASUKU (JP)
ANTOKU YUKI (JP)
CHIBA JUN (JP)
TESHIMA SATOSHI (JP)
KOBAYASHI TASUKU (JP)
ANTOKU YUKI (JP)
International Classes:
H01L21/60; C22C5/06
Foreign References:
| JP2010171378A | 2010-08-05 | |||
| JPH11288962A | 1999-10-19 | |||
| JPH1167812A | 1999-03-09 | |||
| JPS60177639A | 1985-09-11 | |||
| JPH09272931A | 1997-10-21 | |||
| JP2000150562A | 2000-05-30 | |||
| JPH0374851A | 1991-03-29 | |||
| JP2010171378A | 2010-08-05 |
Attorney, Agent or Firm:
KOHNO Naotaka (JP)
Naotaka Kono (JP)
Naotaka Kono (JP)
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Claims: