Title:
AIR GAP PREPARATION METHOD, DYNAMIC RANDOM-ACCESS MEMORY, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/272769
Kind Code:
A1
Abstract:
The present application discloses an air gap preparation method, a dynamic random-access memory, and an electronic device. The method comprises: depositing on the upper end surface of a node contact layer, at the top of a first bit line spacing layer, at the top of a second bit line spacing layer, at the top of an oxide layer, and on the upper end surface of an insulating layer to form a first covering layer; etching downward to remove a part above a horizontal line where the top of the oxide layer is located; forming a first oxide layer on the etched plane; etching to remove a first oxide layer part at the top of the oxide layer on a first side, the top of the first bit line spacing layer on the first side, and the top of the second bit line spacing layer on the first side of each bit line, remaining a first oxide layer part at the top of the oxide layer on a second side, the top of the first bit line spacing layer on the second side, and the top of the second bit line spacing layer on the second side of each bit line, and determining the remained first oxide layer part as an oxide layer pattern; depositing a position of the removed first oxide layer part to form a second covering layer; and removing the oxide layer pattern and the oxide layer.
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Inventors:
YANG LEI (CN)
Application Number:
PCT/CN2021/105004
Publication Date:
January 05, 2023
Filing Date:
July 07, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/764
Foreign References:
| CN108206184A | 2018-06-26 | |||
| CN105719998A | 2016-06-29 | |||
| CN108777253A | 2018-11-09 | |||
| US20150126013A1 | 2015-05-07 |
Attorney, Agent or Firm:
TDIP & PARTNERS (CN)
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