Title:
AMORPHOUS SILICON THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/206723
Kind Code:
A1
Abstract:
The invention provides an amorphous silicon thin film transistor and a manufacturing method therefor, wherein the amorphous silicon thin film transistor comprises a substrate, a gate layer, a gate insulation layer, an active layer, a source/drain layer, an N+ doped layer, a protective insulation layer, and a passivation layer that are stacked on each other. The N+ doped layer is disposed between the active layer and the source/drain layer. The protective insulation layer is disposed on the source/drain layer, and a channel is provided in the source/drain layer and penetrates the N+ doped layer and the protective insulation layer. The passivation layer covers the channel and the protective insulation layer, and the protective insulation layer and the source/drain layer are aligned with each other in the channel.
Inventors:
LI JIAXIN (CN)
Application Number:
PCT/CN2019/083675
Publication Date:
October 15, 2020
Filing Date:
April 22, 2019
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
H01L21/336; H01L29/786
Foreign References:
| CN106847926A | 2017-06-13 | |||
| CN104681626A | 2015-06-03 | |||
| CN101325181A | 2008-12-17 | |||
| CN104733539A | 2015-06-24 | |||
| US7053408B2 | 2006-05-30 |
Attorney, Agent or Firm:
ESSEN PATENT & TRADEMARK AGENCY (CN)
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