BACKGROUND ART In general, tantalum is used in a capacitor in which powder of the tantalum is used for a sintering body to maximize a dielectric ratio and a surface area.

Carbon tantalum is used for a cemented cutting tool. Tantalum is also used for a positive electrode material such as a vacuum tube using an affinity with oxygen and nitrogen. Using corrosion-resistance and harmlessness to the human body, tantalum is used for medical equipment such as a needle for sewing. Also, tantalum is a metal material widely used in a chemical industry and an optical industry. However, since it takes long to produce tantalum in a manufacturing process of producing tantalum, and tantalum cannot but be produced only once for one time process, the working efficiency is lowered, and the productivity is lowered. A conventional example will be described with reference to FIG. 1.

FIG. 1 is a configurational diagram for explaining a conventional tantalum producing apparatus and method.

A conventional tantalum production method uses the Hunter's method which is a kind of a one-time batch metal thermal reduction method using a physical contact of a raw material and a reduction agent.

By the conventional production process of FIG. 1, potassium tantalum fluoride (K2TaF7) as a raw material, sodium (Na) as a reduction agent, and sodium chloride (NaCI), potassium chloride (KCI) and lithium chloride (LiCI) as reaction salts are charged into a reaction container 6 provided in a vacuum container 7 and mixed with a stirrer 3. Then, vacuum is maintained using a vacuum pump 4, and gas is continuously charged and discharged via a gas inlet 2 and a gas outlet 5. The mixed material is heated to 700-1000 C by a heater 1, to perform a reduction process for several hours. Thereafter, temperature is cooled down to the normal temperature.

Accordingly, tantalum hardened in the reaction container 6 is liquefied and separated from the reaction salts and the reduction agent and then collected.

However, since the conventional tantalum production process is a one-time process, in which the raw material, the reduction agent and the reaction salts should be charged and mixed into the reaction container, and tantalum is extracted by the reduction reaction by the physical contact of the charged materials, the reaction container and reaction materials should be exchanged every time the raw materials are charged. Also, it takes long to heat and cool the materials necessary for reaction. When the educed tantalum is separated and collected, the remaining reaction salts and reduction agent are much lost. In particular, since the educed tantalum is hardened inside the reaction container, it is not so easy to collect the educed material, to thereby lower productivity and working efficiency and raise a production cost.

DISCLOSURE OF INVENTION To solve the above problems, it is an object of the present invention to provide an apparatus and a method for producing tantalum by repeating a series of processes continuously, in which a reduction agent, a reaction salt and a raw material are continuously supplied inside a reaction container in a vacuum container and recovered therefrom, electrons produced by reaction of the reduction agent and the reaction salt are moved into a raw material charging container in the reaction container through a conductor member and then are reacted with the raw material, to thereby produce tantalum.

To accomplish the above object of the present invention, there is provided a tantalum production apparatus using a continuous process, comprising: vacuum means for preventing tantalum from being combined with oxygen and oxidized ; heating means for heating a reaction container up to a predetermined temperature in which a reduction agent and a reaction salt are contained, so that the reduction agent and the reaction salt generate electrons by a reduction reaction; and electron moving means for continuously moving the electrons generated by the reduction reaction to a raw material charging container in the reaction container.

There is also provided a tantalum production method comprising: a calcination step for discharging oxygen from the reaction container, and heating a reduction agent and a reaction salt to a predetermined vacuum pressure and a predetermined temperature for a predetermined time; an electron generation step for generating electrons in which the reduction agent and the reaction salt which have been heated in the calcination step are liquefied; and a tantalum production step for producing tantalum in which the electrons generated in the electron generation step are reacted with a raw material.

BRIEF DESCRIPTION OF DRAWINGS The above object and other advantages of the present invention will become more apparent by describing the preferred embodiment thereof in more detail with reference to the accompanying drawings in which: FIG. 1 is a configurational diagram for explaining a conventional tantalum producing apparatus and method; FIG. 2 is a configurational diagram for explaining a tantalum producing apparatus and method according to the present invention; and FIG. 3 is a flow chart view for explaining a tantalum production method according to the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION A preferred embodiment of the present invention will be described with reference to the accompanying drawings.

FIG. 2 is a configurational diagram for explaining a tantalum producing apparatus and method according to the present invention.

The tantalum producing apparatus according to the present invention includes a vacuum means for preventing tantalum from being combined with oxygen and oxidized, a heating means for heating a reaction container 120 up to a predetermined temperature in which a reduction agent and a reaction salt are contained, so that the reduction agent and the reaction salt generate electrons by a reduction reaction, and an electron moving means for continuously moving the electrons generated by the reduction reaction to a raw material charging container 130 in the reaction container 120.

The vacuum means includes a vacuum container 100 and a vacuum pump 110 for generating a vacuum pressure in the vacuum container 100. The vacuum

container 100 includes a reaction container 120 in which a reduction agent and a reaction material are contained, and an inert gas inlet 106 and an inert gas outlet 108 for inhaling an inert gas such as an argon gas and discharging oxygen. A cover 102 is provided in the upper portion of the vacuum means. The cover 102 is provided with a locker 104 of a clamp type in order to open and close the vacuum container 100 to maintain a vacuum degree. To the upper portion of the cover 102 are provided a raw material charging hole 103 for continuously charging and collecting a reduction agent and a raw material necessary in the reaction container 120 and a hole 111 for maintaining a vacuum pressure generated by the vacuum pump 110. Also, a vacuum valve 114 for maintaining the inner vacuum pressure of the vacuum container 100 is provided in the raw material charging hole 103. An insulator 140 is provided between the reaction container 120 and the vacuum container 100 in order to prevent the electrons generated by the reduction agent during reaction from being discharged outwards.

Meanwhile, the heating means includes a chamber housing 200, a heater 220 for generating heat using a thermal wire resistance, and a temperature control unit 230 for controlling the temperature generated by the heater 220. A groove 202 is provided to the upper portion of the chamber housing 200, so that the vacuum container 100 is inserted. The heater 220 for generating heat using the thermal wire resistance is provided to the wall of the groove 202. The temperature control unit 230 is provided to the side wall of the chamber housing 200, in order to control the temperature generated by the heater 220. An electric switch 112 is provided in the lower portion of the temperature control unit 230.

Also, the electron moving means is accomplished by a conductor member 300 through which the raw material charging container 130 and the reaction container 120 are connected, in order to continuously move the electrons generated by the reduction reaction.

A primary cooler 150 is provided in the outer circumferential surface of the vacuum container 100, in order to cool the produced tantalum. A secondary cooler

160 is provided in the upper portion of the cover 102, in order to cool the tantalum taken out from the vacuum container 100.

FIG. 3 is a flow chart view for explaining a tantalum production method according to the present invention.

A tantalum production method according to the present invention includes a calcination step 400 for discharging oxygen from the reaction container, and heating a reduction agent and a reaction salt to a predetermined vacuum pressure and a predetermined temperature for a predetermined time, an electron generation step 500 for generating electrons in which the reduction agent and the reaction salt which have been heated in the calcination step 400 are liquefied, and a tantalum production step 600 for producing tantalum in which the electrons generated in the electron generation step 500 are reacted with a raw material.

The calcination step 400 includes a reduction agent and reaction salt input step 410 for charging the reduction agent and the reaction salt into the reaction container 120, an oxygen discharging step 420 for discharging oxygen by continuously inputting an inert gas heavier than air into the vacuum container 100 so that the input reduction agent and the reaction salt are not oxidized, and a primary heat treatment step 430 for drying the reduction agent and the reaction salt.

The electron generation step 500 is achieved by a secondary heat treatment step 510 for heating the reduction agent and the reaction salt and generating electrons by a reduction reaction.

The tantalum production step 600 includes a raw material input step 610, an electron moving step 620 for moving the electrons generated in the secondary heat treatment step 510 into the raw material charging container 130 via the conductor member 300, and a tantalum extraction step 630 in which the moved electrons and the raw material are reacted with each other to produce tantalum. The tantalum production step further includes a primary cooling step 640 and a secondary cooling step 650 in order to cool the produced tantalum.

The embodiment of the present invention will be described in detail with reference to FIGs. 2 and 3.

At the normal temperature, sodium (Na) as a reduction agent, and sodium chloride (NaCI), potassium chloride (KC1) and lithium chloride (LiCI) as reaction salts are charged into a reaction container 120 and mixed with a stirrer 170. Then, a vacuum degree of 10-3 torr or so is maintained using the vacuum pump 110.

Thereafter, an inert gas is continuously taken in, so that the reaction temperature increases up to 200-300 C to thereby perform a primary heat treatment, and then the reaction temperature increases up to 700-1000 C again to thereby perform a secondary heat treatment. As a result, the reduction agent and the reaction salts in the reaction container 120 are completely liquefied, and the following reaction occurs in the reaction container 120.

R-R++e- Here, R denotes a reduction agent. Thus, the sodium reduction agent is ionized as illustrated in the chemical reaction equation (1) to thereby generate an electron.

Na-Na++e- (1) In the case of potassium, it is ionized as illustrated in the chemical reaction equation (2) to thereby generate an electron.

Ky K++e~ (2) In the case of calcium, it is ionized as illustrated in the chemical reaction equation (3) to thereby generate an electron.

Ca-Ca'-++2e- (3) In the case of magnesium, it is ionized as illustrated in the chemical reaction equation (4) to thereby generate an electron.

Mg Mg2++2e~ (4) Here, if the raw material charging container 130 in which potassium tantalum fluoride of a raw material has been charged, is hung by an excellent

conductor member 300 and dipped in the melting reaction container 120 via the raw material charging hole 103, the electrons generated by the above chemical reaction equations (1)- (4) reach the raw material charging container 130 via the conductor member 300 which is an external circuit connected between the reaction container 120 and the raw material charging container 130 from the reaction container 120. Then, the electrons are reacted with the tantalum ions by the following chemical reaction equation (5) in the raw material charging container 130 to be reduced into tantalum as illustrated in the chemical reaction equation (6).

K2TaF7-2K++Ta5++7F- (5) Ta'++5e--TaTa (6) Thus, the total reaction equation in the raw material charging container 130 is represented as the chemical reaction equation (7).

K, TaF, +5Na- Ta+2KF+5NaF (7) Meanwhile, a predetermined process is completed and the tantalum educed in the raw material charging container 130 is collected. For this purpose, the raw material charging container 130 is cooled down to 200-300°C with the primary cooler 150 and then the tantalum is taken out via the raw material charging hole 103 and sufficiently cooled down to the normal temperature with a secondary cooler 160, to thereby collect tantalum.

Thus, since the present invention moves the electrons to produce tantalum, a continuous process is possible and the raw material is widely selected in its purity and class. Also, the reduction agent is widely selected and the reaction salts can be continuously used. Also, a production process is shortened to thereby increase a working efficiency to enhance the productivity.

INDUSTRIAL APPLICABILITY As described above, the tantalum production apparatus and method using a continuos process moves electrons continuously to thereby enable a continuous tantalum production and widen selection of the raw material and the reduction agent. Accordingly, a working efficiency is increased to enhance the productivity.