Title:
APPARATUS FOR MOLECULAR BEAM EPITAXY GROWTH OF THIN FILM
Document Type and Number:
WIPO Patent Application WO/2022/158630
Kind Code:
A1
Abstract:
Disclosed is an apparatus for the molecular beam epitaxy growth of a thin film. The apparatus for the molecular beam epitaxy growth of a thin film, according to the present invention, comprises: a growth chamber which is connected to a vacuum pump so that the inside thereof is maintained at an ultra-high vacuum state; a substrate mounting unit which is provided inside the growth chamber and has a substrate mounted thereon; a load-lock chamber which is provided outside the growth chamber so as to communicate with the growth chamber, and has positioned therein at least one thin film-growing substrate which is mounted on the substrate mounting unit; and a substrate transfer member which transfers the substrate from the load-lock chamber to the growth chamber, or from the growth chamber to the load-lock chamber, wherein the load-lock chamber is disposed so as to face the substrate mounting unit, and is disposed so as to be collinear with a substrate transfer path of the substrate transfer member.
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Inventors:
PARK EUN JUNG (KR)
CHO SUNG LAE (KR)
PARK EUN JI (KR)
CHO SUNG LAE (KR)
PARK EUN JI (KR)
Application Number:
PCT/KR2021/001242
Publication Date:
July 28, 2022
Filing Date:
January 29, 2021
Export Citation:
Assignee:
UNIV ULSAN FOUND IND COOP (KR)
PARK EUN JUNG (KR)
PARK EUN JUNG (KR)
International Classes:
C30B23/02; C30B23/06
Foreign References:
| JPH069297A | 1994-01-18 | |||
| JPH10303147A | 1998-11-13 | |||
| KR930010751A | 1993-06-23 | |||
| JP2009117466A | 2009-05-28 | |||
| JPH07176493A | 1995-07-14 | |||
| KR20020029190A | 2002-04-18 |
Attorney, Agent or Firm:
DANA PATENT LAW FIRM (KR)
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