Title:
APPARATUS FOR PRODUCING SEMICONDUCTOR SINGLE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/1987/002718
Kind Code:
A1
Abstract:
An apparatus for continuously producing a semiconductor single crystal which can control the temperature of a semiconductor solution in a crucible to the optimum temperature and the feed of a starting material to the optimum quantity. In a semiconductor single crystal production apparatus which pulls up little by little the semiconductor material from a molten bath of the semiconductor material melted in the crucible and solidifies the material in a cylindrical form to obtain the semiconductor single crystal, the apparatus of the present invention includes therein at least one starting material bar of the semiconductor material and a high-frequency induction heating coil for heating and melting the starting material bar.
Inventors:
KAMIO HIROSHI (JP)
NAKAOKA KAZUHIDE (JP)
ARAKI KENJI (JP)
MURAKAMI KATSUHIKO (JP)
KAZAMA AKIRA (JP)
HORIE SHIGETAKE (JP)
NAKAOKA KAZUHIDE (JP)
ARAKI KENJI (JP)
MURAKAMI KATSUHIKO (JP)
KAZAMA AKIRA (JP)
HORIE SHIGETAKE (JP)
Application Number:
PCT/JP1986/000556
Publication Date:
May 07, 1987
Filing Date:
October 31, 1986
Export Citation:
Assignee:
NIPPON KOKAN KK (JP)
International Classes:
C30B15/02; C30B15/14; (IPC1-7): C30B15/02; C30B29/06
Foreign References:
| US3582287A | 1971-06-01 | |||
| JPS486034B1 | ||||
| JPH0555588A | 1993-03-05 | |||
| JPH05688896A | ||||
| JPH05919913B |
Other References:
See also references of EP 0245510A4
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