Title:
APPARATUSES AND METHODS INCLUDING FERROELECTRIC MEMORY AND FOR ACCESSING FERROELECTRIC MEMORY
Document Type and Number:
WIPO Patent Application WO/2018/044487
Kind Code:
A8
Abstract:
Apparatuses and methods are disclosed that include ferroelectric memory and for accessing ferroelectric memory. An example method includes increasing a voltage of a first cell plate of a capacitor to change the voltage of a second cell plate of the capacitor, a second digit line, and a second sense node. The voltage of the second cell plate and the second digit line is decreased to change the voltage of the first cell plate, a first digit line, and a first sense node. The first node is driven to a first voltage and the second node is driven to a second voltage responsive to the voltage of the first node being greater than the second node. The first node is driven to the second voltage and the second node is driven to the first voltage responsive to the voltage of the first node being greater than the second node
Inventors:
DERNER SCOTT J (US)
KAWAMURA CHRISTOPHER J (US)
KAWAMURA CHRISTOPHER J (US)
Application Number:
PCT/US2017/045182
Publication Date:
March 29, 2018
Filing Date:
August 02, 2017
Export Citation:
Assignee:
MICRON TECHNOLOGY INC (US)
International Classes:
G11C11/22; H01L27/11502
Attorney, Agent or Firm:
ENG, Kimton et al. (US)
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