ATOMIC LAYER DEPOSITION APPARATUS AND THIN FILM FORMING METHOD

Title:

ATOMIC LAYER DEPOSITION APPARATUS AND THIN FILM FORMING METHOD

Document Type and Number:

WIPO Patent Application WO/2010/103751

Kind Code:

A1

Abstract:

Provided is an atomic layer deposition apparatus which forms a thin film on a substrate. The atomic layer deposition apparatus is provided with: a first container, which is a container that forms a first inner space, is provided with, at different positions, a substrate carry in/out port for carrying in or carrying out the substrate, and a gas introducing port for introducing to the inside a gas which forms the thin film on the substrate; a second container, which is arranged inside of the first container, forms a second inner space separated from the first inner space and is provided with a first opening; a first moving mechanism which moves the second container in the predetermined direction; and a control section which controls the first moving mechanism such that the second container is moved to a first position where the substrate carry in/out port and the first opening face each other in the case of carrying in or carrying out the substrate, and the second container is moved to a second position where the gas introducing port and the first opening face each other in the case of forming the thin film on the substrate.

Inventors:

MURATA KAZUTOSHI (JP)
MORI YASUNARI (JP)

Application Number:

PCT/JP2010/001462

Publication Date:

September 16, 2010

Filing Date:

March 03, 2010

Export Citation:

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Assignee:

MITSUI SHIPBUILDING ENG (JP)
MURATA KAZUTOSHI (JP)
MORI YASUNARI (JP)

International Classes:

H01L21/31; C23C16/44; C23C16/455

Foreign References:

JP2006310813A	2006-11-09
JP2006222468A	2006-08-24
JP2007027791A	2007-02-01
JP2002534786A	2002-10-15
JP2008240077A	2008-10-09

Other References: